BEGIN:VCALENDAR VERSION:2.0 METHOD:PUBLISH PRODID:-//Missouri State University/Calendar of Events//EN CALSCALE:GREGORIAN X-WR-TIMEZONE:America/Chicago BEGIN:VTIMEZONE TZID:America/Chicago BEGIN:DAYLIGHT TZOFFSETFROM:-0600 TZOFFSETTO:-0500 DTSTART:20070311T020000 RRULE:FREQ=YEARLY;BYMONTH=3;BYDAY=2SU TZNAME:CDT END:DAYLIGHT BEGIN:STANDARD TZOFFSETFROM:-0500 TZOFFSETTO:-0600 DTSTART:20071104T020000 RRULE:FREQ=YEARLY;BYMONTH=11;BYDAY=1SU TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT UID:be39c9f6-b4f9-4665-a3da-d3988a73fee4.220228@calendar.missouristate.edu CREATED:20220224T030802Z LAST-MODIFIED:20220224T030802Z LOCATION:Kemper Hall 206 SUMMARY:PAMS Seminar: "Reliability of Silicon Devices - Hot Electron Effec ts" by Dr. Mahmud Reaz (alum) DESCRIPTION:Dr. Mahmud ReazMicrochip Technology Inc.\n\n\nDr. Reaz is an a lum from PAMS where he obtained his MS in Materials Science.\n\n\nAbstrac t:The feature-size on the current state-of-the art silicon technology hav e become so small that electron transport and associated reliability can no longer be understood with traditional efforts such as drift-diffusion or hydrodynamic models. Simulation complexity (resource constraint) restr aints one to dynamically account for electron-electron scattering\, elect ron-phonon scattering\, impurity scattering\, impact ionization\, etc.\, altogether using atomistic quantum simulation. In this talk -- the Monte Carlo technique will be discussed to self-consistently (semiclassically) solve the Boltzmann-Poisson transport equations with full electronic and phonon energy bands to simulate the non-equilibrium carrier transport in materials and devices. Simulations of hot-carrier energy loss to the latt ice and cold carriers show that the impact ionization and phonon interact ions at or below ~5 eV energy primarily contribute to the experimentally derived radiation-ionization energies (3.69 eV/electron-hole pair in Si a nd 2.62 eV/ehp in Ge) of the semiconducting materials. In addition to an energy loss equal to the band gap energy via impact ionization\, acoustic -phonon emission\, which has been omitted in prior work\, contributes 30% of the remaining carrier-energy loss\, while optical-phonon emission con tributes the other 70%. Next\, the energy distributions of electrons in g ate-all-around (GAA) Si MOSFETs are analyzed\, including additional consi derations for elastic interactions\, which become important at reduced di mensions and high-carrier densities. The simulated density and average en ergy of the hot electrons correlate well with experimentally observed dev ice degradation. The results imply that the interaction of high-energy el ectrons with hydrogen-passivated phosphorus dopant complexes within the d rain may provide an additional pathway for interface-trap formation in th ese devices. Simulated momentum transfer events in the Si NW MOSFETs chan nel show that the Coulomb processes (often ignored as a higher-order phen omenon) significantly reduce mobility at low-field conditions ? a phenome non that already redefined Moore’s scaling law as we know it. X-ALT-DESC;FMTTYPE=text/html:<html><head><title></title></head><body><p><s trong>Dr. Mahmud Reaz</strong><br><strong>Microchip Technology Inc.</stro ng></p>\n<p>Dr. Reaz is an alum from PAMS where he&nbsp\;obtained his MS in Materials Science.</p>\n<p>Abstract:<br>The feature-size on the curren t state-of-the art silicon technology have become so small that electron transport and associated reliability can no longer be understood with tra ditional efforts such as drift-diffusion or hydrodynamic models. Simulati on complexity (resource constraint) restraints one to dynamically account for electron-electron scattering\, electron-phonon scattering\, impurity scattering\, impact ionization\, etc.\, altogether using atomistic quant um simulation. In this talk -- the Monte Carlo technique will be discusse d to self-consistently (semiclassically) solve the Boltzmann-Poisson tran sport equations with full electronic and phonon energy bands to simulate the non-equilibrium carrier transport in materials and devices. Simulatio ns of hot-carrier energy loss to the lattice and cold carriers show that the impact ionization and phonon interactions at or below ~5 eV energy pr imarily contribute to the experimentally derived radiation-ionization ene rgies (3.69 eV/electron-hole pair in Si and 2.62 eV/ehp in Ge) of the sem iconducting materials. In addition to an energy loss equal to the band ga p energy via impact ionization\, acoustic-phonon emission\, which has bee n omitted in prior work\, contributes 30% of the remaining carrier-energy loss\, while optical-phonon emission contributes the other 70%. Next\, t he energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed\, including additional considerations for elastic interactio ns\, which become important at reduced dimensions and high-carrier densit ies. The simulated density and average energy of the hot electrons correl ate well with experimentally observed device degradation. The results imp ly that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional p athway for interface-trap formation in these devices. Simulated momentum transfer events in the Si NW MOSFETs channel show that the Coulomb proces ses (often ignored as a higher-order phenomenon) significantly reduce mob ility at low-field conditions ? a phenomenon that already redefined Moore ’s scaling law as we know it.</p></body></html> DTSTART;TZID=America/Chicago:20220303T160000 DTEND;TZID=America/Chicago:20220303T170000 SEQUENCE:0 URL:https://physics.missouristate.edu/seminars.htm CATEGORIES:Public,Alumni,Current Students,Faculty,Future Students,Staff END:VEVENT END:VCALENDAR