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UID:86b0c354-9b14-4fbb-b9b6-c8c299e08792.220472@calendar.missouristate.edu
CREATED:20220321T135028Z
LAST-MODIFIED:20220321T135028Z
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SUMMARY:PAMS Seminar: "Cloning of Dirac Electrons in  Graphene/SiC Heteros
 tructure" by Dr. Guang Bian
DESCRIPTION:Dr. Guang BianDepartment of Physics &amp; AstronomyUniversity of M
 issouri\n\n\nAbstract:\n\n\nTuning interaction between Dirac states in gr
 aphene has attracted great interest because it modifies the spectra of th
 e two-dimensional electron system and\, consequently\, gives rise to nove
 l condensed-matter phases such as superconductors\, Mott insulators\, Wig
 ner crystals and quantum anomalous Hall insulators. For example\, emergen
 t superconductivity occurs in twisted bilayer graphene at magic angles du
 e to the enhanced correlation between Dirac fermions in the two graphene 
 layers. In this work\, we report a new way to engineer the band structure
  of graphene\, namely\, cloning Dirac states by the perturbation of subst
 rate potential. We grow the graphene epitaxially on 6H-SiC substrate. The
  SiC surface potential exerts an incommensurate perturbation to the graph
 ene Dirac bands\, resulting in the duplication of Dirac states at differe
 nt locations in the momentum space. The clone of the Dirac states has bee
 n observed in our angle-resolved photoemission spectroscopy (ARPES) exper
 iments. We perform theoretical modelling to illuminate this cloning mecha
 nism and show the possibility of controllably modifying the electronic sp
 ectra of two-dimensional atomic crystals by varying the substrate paramet
 ers.\n\n\nThis seminar will be via Zoom.
X-ALT-DESC;FMTTYPE=text/html:&lt;html&gt;&lt;head&gt;&lt;title&gt;&lt;/title&gt;&lt;/head&gt;&lt;body&gt;&lt;p&gt;&lt;s
 trong&gt;Dr.&amp;nbsp\;Guang Bian&lt;br&gt;&lt;/strong&gt;&lt;strong&gt;Department of&amp;nbsp\;Physic
 s &amp;amp\; Astronomy&lt;br&gt;&lt;/strong&gt;&lt;b&gt;University of&amp;nbsp\;Missouri&lt;/b&gt;&lt;/p&gt;\n&lt;
 p&gt;Abstract:&lt;/p&gt;\n&lt;p&gt;Tuning interaction between Dirac states in graphene h
 as attracted great interest because it modifies the spectra of the two-di
 mensional electron system and\, consequently\, gives rise to novel conden
 sed-matter phases such as superconductors\, Mott insulators\, Wigner crys
 tals and quantum anomalous Hall insulators. For example\, emergent superc
 onductivity occurs in twisted bilayer graphene at magic angles due to the
  enhanced correlation between Dirac fermions in the two graphene layers. 
 In this work\, we report a new way to engineer the band structure of grap
 hene\, namely\, cloning Dirac states by the perturbation of substrate pot
 ential. We grow the graphene epitaxially on 6H-SiC substrate. The SiC sur
 face potential exerts an incommensurate perturbation to the graphene Dira
 c bands\, resulting in the duplication of Dirac states at different locat
 ions in the momentum space. The clone of the Dirac states has been observ
 ed in our angle-resolved photoemission spectroscopy (ARPES) experiments. 
 We perform theoretical modelling to illuminate this cloning mechanism and
  show the possibility of controllably modifying the electronic spectra of
  two-dimensional atomic crystals by varying the substrate parameters.&lt;/p&gt;
 \n&lt;p&gt;This seminar will be via Zoom.&lt;/p&gt;&lt;/body&gt;&lt;/html&gt;
DTSTART;TZID=America/Chicago:20220324T160000
DTEND;TZID=America/Chicago:20220324T170000
SEQUENCE:0
URL:https://physics.missouristate.edu/seminars.htm
CATEGORIES:Public,Alumni,Current Students,Faculty,Future Students,Staff
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