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DTSTART:20070311T020000
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UID:ece5e7cf-6681-46bb-ae6f-f730e5ca5458.220708@calendar.missouristate.edu
CREATED:20220411T134001Z
LAST-MODIFIED:20220411T134001Z
LOCATION:Kemper Hall 206
SUMMARY:PAMS Seminar: "Atomic &amp; Molecular Layer Deposition (ALD/MLD) for E
 merging Research Studies" by Dr. Xiangbo (Henry) Meng
DESCRIPTION:Dr. Xiangbo (Henry) MengDepartment of Mechanical EngineeringUn
 iversity of Arkansas\n\n\nAbstract:\n\n\nAtomic and molecular layer depos
 ition (ALD &amp; MLD) are two powerful vapor-phase thin-film techniques. In t
 he past decade\, they have been attracting more and more attention. ALD a
 nd MLD share a similar growth mechanism relying on self-limiting gas-soli
 d surface reactions. They both are operated with repeatable cycles to pro
 ceed film growth. Ascribed to their unique mechanism\, ALD and MLD were b
 orn with a series of unrivaled capabilities\, such as extremely uniform a
 nd conformal coatings over any substrates of any shapes\, low growth temp
 erature (typically = 200 oC and even down to room temperature)\, and accu
 rate growth controllability at the atomic and molecular level. Due to the
 ir different adoptions of precursors\, ALD is exclusively for growing ino
 rganic materials while MLD is specially for organic compounds. Consequent
 ly\, they and their combination potentially can develop any materials fro
 m inorganics to organics and inorganic-organic hybrids\, which are in exi
 stence and not in existence. Therefore\, they have been providing us with
  new solutions in many applications\, ranging from semiconductors to cata
 lysis\, new energies\, biomedical\, and surface engineering. In this talk
 \, Dr. Meng will give an introduction on the basic principles of ALD and 
 MLD\, their historic development\, and emerging applications.
X-ALT-DESC;FMTTYPE=text/html:&lt;html&gt;&lt;head&gt;&lt;title&gt;&lt;/title&gt;&lt;/head&gt;&lt;body&gt;&lt;p&gt;&lt;b
 &gt;Dr. Xiangbo (Henry) Meng&lt;/b&gt;&lt;br&gt;&lt;strong&gt;Department of&amp;nbsp\;Mechanical E
 ngineering&lt;br&gt;&lt;/strong&gt;&lt;strong&gt;University of&amp;nbsp\;Arkansas&lt;/strong&gt;&lt;stro
 ng&gt;&lt;br&gt;&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;Abstract:&lt;/p&gt;\n&lt;p&gt;Atomic and molecular layer dep
 osition (ALD &amp;amp\; MLD) are two powerful vapor-phase thin-film technique
 s. In the past decade\, they have been attracting more and more attention
 . ALD and MLD share a similar growth mechanism relying on self-limiting g
 as-solid surface reactions. They both are operated with repeatable cycles
  to proceed film growth. Ascribed to their unique mechanism\, ALD and MLD
  were born with a series of unrivaled capabilities\, such as extremely un
 iform and conformal coatings over any substrates of any shapes\, low grow
 th temperature (typically = 200 oC and even down to room temperature)\, a
 nd accurate growth controllability at the atomic and molecular level. Due
  to their different adoptions of precursors\, ALD is exclusively for grow
 ing inorganic materials while MLD is specially for organic compounds. Con
 sequently\, they and their combination potentially can develop any materi
 als from inorganics to organics and inorganic-organic hybrids\, which are
  in existence and not in existence. Therefore\, they have been providing 
 us with new solutions in many applications\, ranging from semiconductors 
 to catalysis\, new energies\, biomedical\, and surface engineering. In th
 is talk\, Dr. Meng will give an introduction on the basic principles of A
 LD and MLD\, their historic development\, and emerging applications.&lt;/p&gt;&lt;
 /body&gt;&lt;/html&gt;
DTSTART;TZID=America/Chicago:20220505T160000
DTEND;TZID=America/Chicago:20220505T170000
SEQUENCE:0
URL:https://physics.missouristate.edu/seminars.htm
CATEGORIES:Public,Alumni,Current Students,Faculty,Future Students,Staff
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