BEGIN:VCALENDAR VERSION:2.0 METHOD:PUBLISH PRODID:-//Missouri State University/Calendar of Events//EN CALSCALE:GREGORIAN X-WR-TIMEZONE:America/Chicago BEGIN:VTIMEZONE TZID:America/Chicago BEGIN:DAYLIGHT TZOFFSETFROM:-0600 TZOFFSETTO:-0500 DTSTART:20070311T020000 RRULE:FREQ=YEARLY;BYMONTH=3;BYDAY=2SU TZNAME:CDT END:DAYLIGHT BEGIN:STANDARD TZOFFSETFROM:-0500 TZOFFSETTO:-0600 DTSTART:20071104T020000 RRULE:FREQ=YEARLY;BYMONTH=11;BYDAY=1SU TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT UID:19f56094-a087-4524-8fa6-ec742da1fdc1.224254@calendar.missouristate.edu CREATED:20230224T151435Z LAST-MODIFIED:20230224T151435Z LOCATION:Kemper Hall 204 SUMMARY:PAMS Seminar: "Fundamentals of Amorphous Oxide Semiconductors" by Dr. Julia Medvedeva DESCRIPTION:Dr. Julia MedvedevaDepartment of PhysicsMissouri University of Science and Technology\n\n\nAbstract:\n\n\nAmorphous oxide semiconductor s (AOS)—ternary or quaternary oxides of post-transition metals—have attra cted a lot of attention due to high carrier mobility which is an order of magnitude larger than that of amorphous silicon (a-Si:H). Unlike Si-base d semiconductors\, AOS exhibit optical\, electrical\, thermal\, and mecha nical properties that are comparable or even superior to those possessed by their crystalline counterparts. However\, the properties of AOS are ex tremely sensitive to deposition conditions\, oxygen stoichiometry\, and m etal composition\, rendering the available research data inconsistent or hard to reproduce\, thus\, hampering further progress. Moreover\, owing t o the weak metal-oxygen bonding as well as many degrees of freedom in dis ordered materials\, defects in AOS have the structural\, thermal\, and el ectronic characteristics that differ fundamentally from those in the crys talline transparent conducting oxides.\n\n\nTo navigate the large paramet er space for AOS materials\, computationally-intensive ab-initio Molecula r Dynamics simulations combined with comprehensive structural analysis an d accurate Density-Functional calculations\, are performed for several AO S families. Integrated with systematic experimental measurements. The res ults provide microscopic understanding of complex relationships between t he morphology\, carrier generation\, and electron transport across the cr ystalline-amorphous transition and help derive versatile design principle s for next-generation transparent amorphous semiconductors with a combina tion of properties not achievable in Si-based architectures. X-ALT-DESC;FMTTYPE=text/html:<html><head><title></title></head><body><p><b >Dr.&nbsp\;Julia Medvedeva</b><br><strong>Department of Physics<br></stro ng><b>Missouri University of Science and Technology</b></p>\n<p>Abstract: </p>\n<p>Amorphous oxide semiconductors (AOS)—ternary or quaternary oxide s of post-transition metals—have attracted a lot of attention due to high carrier mobility which is an order of magnitude larger than that of amor phous silicon (a-Si:H). Unlike Si-based semiconductors\, AOS exhibit opti cal\, electrical\, thermal\, and mechanical properties that are comparabl e or even superior to those possessed by their crystalline counterparts. However\, the properties of AOS are extremely sensitive to deposition con ditions\, oxygen stoichiometry\, and metal composition\, rendering the av ailable research data inconsistent or hard to reproduce\, thus\, hamperin g further progress. Moreover\, owing to the weak metal-oxygen bonding as well as many degrees of freedom in disordered materials\, defects in AOS have the structural\, thermal\, and electronic characteristics that diffe r fundamentally from those in the crystalline transparent conducting oxid es.</p>\n<p>To navigate the large parameter space for AOS materials\, com putationally-intensive ab-initio Molecular Dynamics simulations combined with comprehensive structural analysis and accurate Density-Functional ca lculations\, are performed for several AOS families. Integrated with syst ematic experimental measurements. The results provide microscopic underst anding of complex relationships between the morphology\, carrier generati on\, and electron transport across the crystalline-amorphous transition a nd help derive versatile design principles for next-generation transparen t amorphous semiconductors with a combination of properties not achievabl e in Si-based architectures.</p></body></html> DTSTART;TZID=America/Chicago:20230302T160000 DTEND;TZID=America/Chicago:20230302T170000 SEQUENCE:0 URL:https://physics.missouristate.edu/seminars.htm CATEGORIES:Public,Alumni,Current Students,Faculty,Future Students,Staff END:VEVENT END:VCALENDAR