BEGIN:VCALENDAR VERSION:2.0 METHOD:PUBLISH PRODID:-//Missouri State University/Calendar of Events//EN CALSCALE:GREGORIAN X-WR-TIMEZONE:America/Chicago BEGIN:VTIMEZONE TZID:America/Chicago BEGIN:DAYLIGHT TZOFFSETFROM:-0600 TZOFFSETTO:-0500 DTSTART:20070311T020000 RRULE:FREQ=YEARLY;BYMONTH=3;BYDAY=2SU TZNAME:CDT END:DAYLIGHT BEGIN:STANDARD TZOFFSETFROM:-0500 TZOFFSETTO:-0600 DTSTART:20071104T020000 RRULE:FREQ=YEARLY;BYMONTH=11;BYDAY=1SU TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT UID:ece5e7cf-6681-46bb-ae6f-f730e5ca5458.220708@calendar.missouristate.edu CREATED:20220411T134001Z LAST-MODIFIED:20220411T134001Z LOCATION:Kemper Hall 206 SUMMARY:PAMS Seminar: "Atomic & Molecular Layer Deposition (ALD/MLD) for E merging Research Studies" by Dr. Xiangbo (Henry) Meng DESCRIPTION:Dr. Xiangbo (Henry) MengDepartment of Mechanical EngineeringUn iversity of Arkansas\n\n\nAbstract:\n\n\nAtomic and molecular layer depos ition (ALD & MLD) are two powerful vapor-phase thin-film techniques. In t he past decade\, they have been attracting more and more attention. ALD a nd MLD share a similar growth mechanism relying on self-limiting gas-soli d surface reactions. They both are operated with repeatable cycles to pro ceed film growth. Ascribed to their unique mechanism\, ALD and MLD were b orn with a series of unrivaled capabilities\, such as extremely uniform a nd conformal coatings over any substrates of any shapes\, low growth temp erature (typically = 200 oC and even down to room temperature)\, and accu rate growth controllability at the atomic and molecular level. Due to the ir different adoptions of precursors\, ALD is exclusively for growing ino rganic materials while MLD is specially for organic compounds. Consequent ly\, they and their combination potentially can develop any materials fro m inorganics to organics and inorganic-organic hybrids\, which are in exi stence and not in existence. Therefore\, they have been providing us with new solutions in many applications\, ranging from semiconductors to cata lysis\, new energies\, biomedical\, and surface engineering. In this talk \, Dr. Meng will give an introduction on the basic principles of ALD and MLD\, their historic development\, and emerging applications. X-ALT-DESC;FMTTYPE=text/html:
Dr. Xiangbo (Henry) Meng
Department of \;Mechanical E
ngineering
University of \;Arkansas
Abstract:
\nAtomic and molecular layer dep osition (ALD &\; MLD) are two powerful vapor-phase thin-film technique s. In the past decade\, they have been attracting more and more attention . ALD and MLD share a similar growth mechanism relying on self-limiting g as-solid surface reactions. They both are operated with repeatable cycles to proceed film growth. Ascribed to their unique mechanism\, ALD and MLD were born with a series of unrivaled capabilities\, such as extremely un iform and conformal coatings over any substrates of any shapes\, low grow th temperature (typically = 200 oC and even down to room temperature)\, a nd accurate growth controllability at the atomic and molecular level. Due to their different adoptions of precursors\, ALD is exclusively for grow ing inorganic materials while MLD is specially for organic compounds. Con sequently\, they and their combination potentially can develop any materi als from inorganics to organics and inorganic-organic hybrids\, which are in existence and not in existence. Therefore\, they have been providing us with new solutions in many applications\, ranging from semiconductors to catalysis\, new energies\, biomedical\, and surface engineering. In th is talk\, Dr. Meng will give an introduction on the basic principles of A LD and MLD\, their historic development\, and emerging applications.
< /body> DTSTART;TZID=America/Chicago:20220505T160000 DTEND;TZID=America/Chicago:20220505T170000 SEQUENCE:0 URL:https://physics.missouristate.edu/seminars.htm CATEGORIES:Public,Alumni,Current Students,Faculty,Future Students,Staff END:VEVENT END:VCALENDAR